Highly Responsive, Self-Powered a-GaN Based UV-A Photodetectors Driven by Unintentional Asymmetrical Electrodes
Author:
Affiliation:
1. Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
2. Central Research Laboratory, Bharat Electronics, Bangalore 560013, India
Funder
Indian National Science Academy
Council for Scientific and Industrial Research
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.9b00834
Reference49 articles.
1. Self-powered UV photodetector based on heterostructured TiO2 nanowire arrays and polyaniline nanoflower arrays
2. High-Performance, Self-Powered Photodetectors Based on Perovskite and Graphene
3. High-performance of self-powered UV photodetector with long-term stability based on ZnO nanorods and an iodine-free quasi solid-state electrolyte
4. Self-Powered Near-Infrared Photodetector Based on Asymmetrical Schottky Interdigital Contacts
5. Tuning the properties of a self-powered UV photodetector based on ZnO and poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) by hydrogen annealing of ZnO nanorod arrays
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