Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

Author:

Razeen Ahmed S.ORCID,Tang Eric X.,Yuan Gao,Ong Jesper,Radhakrishnan K.,Tripathy Sudhiranjan

Publisher

Elsevier BV

Reference45 articles.

1. A real-time wearable UV-radiation monitor based on a high-performance p-CuZnS/n-TiO2 photodetector;Xu;Adv. Mater.,2018

2. Localized surface plasmon enhanced photoresponse of AlGaN MSM solar-blind ultraviolet photodetectors;Lu;Mater. Res. Express,2019

3. Photodetection properties of nonpolar a-plane GaN grown by three approaches using plasma-assisted molecular beam Epitaxy;Pant;Phys. Status Solidi (A) Appl. Mater. Sci.,2019

4. Binary response Se/ZnO p-n heterojunction UV photodetector with high on/off ratio and fast speed;Hu;Laser Photon. Rev.,2017

5. High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector;Wang;J. Alloys Compd.,2019

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