Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes-Reference-Cited by-同舟云学术

Low frequency noise in two-dimensional lateral GaN/AlGaN Schottky diodes

Author:

Cywiński G.¹^ORCID,Szkudlarek K.¹,Kruszewski P.¹²,Yahniuk I.¹,Yatsunenko S.¹,Muzioł G.¹,Skierbiszewski C.¹,Knap W.¹³,Rumyantsev S. L.⁴⁵

Affiliation:

1. Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warsaw, Poland

2. Top-GaN Ltd., ul. Sokołowska 29/37, 01-142 Warsaw, Poland

3. University of Montpellier and CNRS, UMR 5221, Laboratoire Charles Coulomb (L2C), Pl. E. Bataillon, 34095 Montpellier, France

4. Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul., 26, 194021 St. Petersburg, Russia

5. National Research University of Information Technologies, Mechanics, and Optics, St. Petersburg 197101, Russia

Funder

TERA-MIR Materials, Generation, Detection and Applications

EU Regional Operational Programme

French Embassy, Warsaw

LIA-TERAMIR - Laboratory of Terahertz and MID-Ifrared Collective Phenomena in Semiconductor Nanostructures

Poland financing Doctoral Cotutelle

SchottGaN Project under the Applied Research Program of the National Centre for Research and Development

Russian Foundation for Basic Research (RFBR)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference24 articles.

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