Excess noise in high-current diamond diodes-Reference-Cited by-同舟云学术

Excess noise in high-current diamond diodes

Published:2022-02-07 Issue:6 Volume:120 Page:062103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ghosh Subhajit¹^ORCID,Surdi Harshad²^ORCID,Kargar Fariborz¹^ORCID,Koeck Franz A.³^ORCID,Rumyantsev Sergey⁴^ORCID,Goodnick Stephen²⁴^ORCID,Nemanich Robert J.³^ORCID,Balandin Alexander A.¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Bourns College of Engineering, University of California, Riverside, California 92521, USA

2. School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona 85281, USA

3. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

4. CENTERA Laboratories, Institute of High-Pressure Physics, Polish Academy of Sciences, Warsaw 01-142, Poland

Funder

Energy Frontier Research Centers

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/am-pdf/10.1063/5.0083383

Reference50 articles.

1. A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

2. Ultra-thin AlGaN/GaN HFET with a high breakdown voltage on sapphire substrates

3. Ultrawide bandgap semiconductors

4. Fabrication of inversion p-channel MOSFET with a nitrogen-doped diamond body

5. Vertical field inhomogeneity associated with threading dislocations in GaN high electron mobility transistor epitaxial stacks

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