Effects of defect creation on bidirectional behavior with hump characteristics of InGaZnO TFTs under bias and thermal stress
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/54/i=3S/a=03CB03/pdf
Reference39 articles.
1. Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature
2. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer
3. High-Mobility Thin-Film Transistors with Polycrystalline In–Ga–O Channel Fabricated by DC Magnetron Sputtering
4. Achieving High Field-Effect Mobility Exceeding 50 cm \(^{\mathrm {2}}\) /Vs in In-Zn-Sn-O Thin-Film Transistors
5. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
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