Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/53/i=11/a=112103/pdf
Reference31 articles.
1. Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes
2. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers
3. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
4. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
5. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
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1. Atomic layer etching (ALE) of III-nitrides;Applied Physics Letters;2023-08-07
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3. Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111);Chinese Physics Letters;2018-05
4. Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer;Optical Materials Express;2018-04-12
5. Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy;RSC Advances;2015
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