Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/35/5/057303/pdf
Reference25 articles.
1. Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
2. Hole injection from the sidewall of V-shaped pits into c-plane multiple quantum wells in InGaN light emitting diodes
3. 3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits
4. A new interpretation for performance improvement of high-efficiency vertical blue light-emitting diodes by InGaN/GaN superlattices
5. Suppression of Nonradiative Recombination by V-Shaped Pits inGaInN/GaNQuantum Wells Produces a Large Increase in the Light Emission Efficiency
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1. Influence of Superlattice Structure on V-Defect Distribution, External Quantum Efficiency and Electroluminescence for Red InGaN Based µLEDs on Silicon;Crystals;2022-08-28
2. Effect of low-temperature GaN cap layer thickness on the optoelectronic performance of InGaN green LEDs with V-shape pits;Semiconductor Science and Technology;2020-03-19
3. Monolithic semi-polar ( 1 1 ¯ 01 ) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*;Chinese Physics B;2019-08-01
4. Aging mechanism of GaN-based yellow LEDs with V-pits*;Chinese Physics B;2019-06-01
5. Detailed surface analysis of V-defects in GaN films on patterned silicon(111) substrates by metal–organic chemical vapour deposition;Journal of Applied Crystallography;2019-05-31
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