Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy-Reference-Cited by-同舟云学术

Carrier relaxation dynamics in defect states of epitaxial GaN/AlN/Si using ultrafast transient absorption spectroscopy

Published:2015 Issue:102 Volume:5 Page:83969-83975
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Dugar Palak¹²³⁴,Kumar Mahesh¹²³⁴,T. C. Shibin Krishna¹²³⁴⁵,Aggarwal Neha¹²³⁴⁵,Gupta Govind¹²³⁴⁵

Affiliation:

1. Physics of Energy Harvesting Division

2. CSIR-National Physical Laboratory (CSIR-NPL)

3. New Delhi-110012

4. India

5. Academy of Scientific and Innovative Research (AcSIR)

Abstract

Carrier relaxation dynamics through the defect levels in an epitaxial GaN/AlN/Si have been analysed on the femto–picosecond timescale, using ultrafast-transient absorption spectroscopy.

Funder

Council for Scientific and Industrial Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA10877B

Reference32 articles.

1. High internal and external quantum efficiency InGaN/GaN solar cells

2. High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN

3. Solar-Blind p-i-n Photodetectors Formed on ${\rm SiO}_{2}$-Patterned n-GaN Templates

4. Catalyst-Free InGaN/GaN Nanowire Light Emitting Diodes Grown on (001) Silicon by Molecular Beam Epitaxy

5. Variable-Color Light-Emitting Diodes Using GaN Microdonut arrays

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