Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes-Reference-Cited by-同舟云学术

Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes

Published:2012-12-17 Issue:25 Volume:101 Page:253512
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Moe Craig G.,Garrett Gregory A.,Rotella Paul,Shen Hongen,Wraback Michael,Shatalov Max,Sun Wenhong,Deng Jianyu,Hu Xuhong,Bilenko Yuri,Yang Jinwei,Gaska Remis

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4772506

Reference14 articles.

1. AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

2. High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

3. Electrical and optical properties of Mg-doped Al0.7Ga0.3N alloys

4. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures

5. Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

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