Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3204446
Reference18 articles.
1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
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3. Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry
4. Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays
5. Continuous-wave Operation of AlGaN-cladding-free Nonpolarm-Plane InGaN/GaN Laser Diodes
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