Efficiency of GaN/InGaN light-emitting diodes with interdigitated mesa geometry
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405145
Reference11 articles.
1. STIMULATED EMISSION OF RADIATION FROM GaAsp‐nJUNCTIONS
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency
4. Modeling of a GaN-based light-emitting diode for uniform current spreading
5. Low-resistance ohmic contacts to p-type GaN
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