A Novel GaN LED Structure With Both P and N Discontinuous Ohmic Contacts and Discontinuous CBL-Reference-Cited by-同舟云学术

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A Novel GaN LED Structure With Both P and N Discontinuous Ohmic Contacts and Discontinuous CBL

Published:2022-06 Issue:3 Volume:14 Page:1-6
ISSN:1943-0655
Container-title:IEEE Photonics Journal
language:
Short-container-title:IEEE Photonics J.

Author:

Xu Hao¹^ORCID,Guo Weiling¹,Deng Jie¹,Chen Jiaxin¹,Miao Hui¹,Sun Jie²^ORCID

Affiliation:

1. Key Laboratory of Optoelectronics Technology, Beijing University of Technology, Beijing, China

2. Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China and National and Local United Engineering Laboratory of Flat Panel Display Technology, Fuzhou University, Fuzhou, China

Funder

Fujian province governmental projects

Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China

National key R&D Program of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/4563994/9758988/09761770.pdf?arnumber=9761770

Reference11 articles.

1. Lateral current transport path, a model for GaN-based light-emitting diodes: Applications to practical device designs

2. Current crowding in InAsSb light-emitting diodes

3. High power InGaN/GaN flip-chip LEDs with via-hole-based two-level metallization electrodes

4. Effects of the electrode metal structure and the current blocking layer on the characteristics of blue GaN-based light-emitting diodes

5. High-power AlGaInN LED chips with two-level metallization

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