Back-Contacted GaInP/GaAs LED Structures by Ex-Situ Dopant Redistribution-Reference-Cited by-同舟云学术

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Back-Contacted GaInP/GaAs LED Structures by Ex-Situ Dopant Redistribution

Published:2023-10 Issue:10 Volume:70 Page:5156-5162
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Myllynen Antti¹^ORCID,Shahahmadi Seyed Ahmad¹^ORCID,Radevici Ivan¹,Oksanen Jani¹

Affiliation:

1. Engineered Nanosystems Group, School of Science, Aalto University, Aalto, Finland

Funder

Academy of Finland

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10261402/10219540.pdf?arnumber=10219540

Reference29 articles.

1. Optimization of four terminal rear heterojunction GaAs on Si interdigitated back contact tandem solar cells

2. A Taxonomy for Three-Terminal Tandem Solar Cells

3. Electroluminescent Cooling in III–V Intracavity Diodes: Practical Requirements

4. Thermophotonic cooling with light-emitting diodes

5. Silicon heterojunction solar cell with interdigitated back contacts for a photoconversion efficiency over 26%

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Pushing the limits of non-radiative recombination suppression in GaAs/GaInP light-emitting diodes by doping profile engineering;Applied Physics Letters;2024-06-10

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