High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability-Reference-Cited by-同舟云学术

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High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability

Published:2014-01-01 Issue:4S Volume:53 Page:04EC12
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

He Yandong,Zhang Ganggang,Zhang Xing

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference30 articles.

1. A Rugged LDMOS for LBC5 Technology

2. Complementary LDMOS transistors for a CMOS/BiCMOS process

3. A new lateral power MOSFET for smart power ICs: the “LUDMOS concept”

4. 0.15µm BiC-DMOS technology with novel stepped-STI N-channel LDMOS

5. Planar dual gate oxide LDMOS structures in 180nm power management technology

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1. Evidence of Hot-Hole Induced Degradation in Lateral NDRIFT MOSFET: Characterization and TCAD Analysis;IEEE Transactions on Device and Materials Reliability;2022-06

2. The highly electrical performances of flexible indium-zinc-oxide based thin-film transistors on stability improvement by passivation layer;Microelectronic Engineering;2017-06

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