A Rugged LDMOS for LBC5 Technology
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/9957/32010/01488017.pdf?arnumber=1488017
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Hybrid Source Laterally Diffused MOS Drain Engineering for ESD Robustness;IEEE Electron Device Letters;2023-12
2. The Root Cause Behind a Peculiar Dual-Mode ON-State Breakdown in High Voltage LDMOS;IEEE Transactions on Electron Devices;2022-04
3. Breakdown-Voltage Enhancing in LDMOS by Introducing Buffered Step Doping Technique;2022 First International Conference on Electrical, Electronics, Information and Communication Technologies (ICEEICT);2022-02-16
4. High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability;Japanese Journal of Applied Physics;2014-01-01
5. Physics-Based Low-Cost Test Technique for High Voltage LDMOS;Journal of Electronic Testing;2013-11-15
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