Complementary LDMOS transistors for a CMOS/BiCMOS process
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/6912/18590/00856771.pdf?arnumber=856771
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability;Japanese Journal of Applied Physics;2014-01-01
2. Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique;Japanese Journal of Applied Physics;2012-04-20
3. An Investigation on Anomalous Hot-Carrier-Induced On-Resistance Reduction in n-Type LDMOS Transistors;IEEE Transactions on Device and Materials Reliability;2009-09
4. On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region;IEEE Electron Device Letters;2008-09
5. Effect of Gate Voltage on Hot-Carrier-Induced On-Resistance Degradation in High-Voltage n-Type Lateral Diffused Metal–Oxide–Semiconductor Transistors;Japanese Journal of Applied Physics;2008-04-25
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