Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique-Reference-Cited by-同舟云学术

Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Published:2012-04-20 Issue: Volume:51 Page:04DP08
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

He Yandong,Zhang Ganggang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference4 articles.

1. A new lateral power MOSFET for smart power ICs: the “LUDMOS concept”

2. Hot Hole Degradation Effects in Lateral nDMOS Transistors

3. On-Resistance Degradation Induced by Hot-Carrier Injection in LDMOS Transistors With STI in the Drift Region

4. Direct-current measurements of oxide and interface traps on oxidized silicon

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2. A Review on Hot-Carrier-Induced Degradation of Lateral DMOS Transistor;IEEE Transactions on Device and Materials Reliability;2018-06

3. Hot-Carrier-Induced Degradations and Optimizations for Lateral DMOS Transistor With Multiple Floating Poly-Gate Field Plates;IEEE Transactions on Electron Devices;2017-08

4. High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability;Japanese Journal of Applied Physics;2014-01-01