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Modeling of nonlinear thermal resistance in FinFETs

  • Published:2016-03-14 Issue:4S Volume:55 Page:04ED11
  • ISSN:0021-4922
  • Container-title:Japanese Journal of Applied Physics
  • language:
  • Short-container-title:Jpn. J. Appl. Phys.

Author:

Kompala Bala Krishna,Kushwaha Pragya,Agarwal Harshit,Khandelwal Sourabh,Duarte Juan-Pablo,Hu Chenming,Chauhan Yogesh Singh

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Aggravated NBTI reliability due to hard-to-detect open defects;Microelectronics Reliability;2024-09

2. Study on the regulation factors and mechanism of self-heating effects in non-rectangular 14 nm bulk FinFET*;Semiconductor Science and Technology;2024-08-14

3. A Neural Network-based Framework for Accelerated Device-Circuit Electrothermal Co-Simulations in GAAFETs;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

4. Temperature Analysis of DMGC CGAA FET for Future Deep Space and Military Applications: An Insight into Analog/RF/Self-Heating/Linearity;ECS Journal of Solid State Science and Technology;2023-08-01

5. Geometry Dependent Multi-stage Compact Thermal Model for Advanced Nanosheet FETs;2023 International Symposium of Electronics Design Automation (ISEDA);2023-05-08
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