Geometry Dependent Multi-stage Compact Thermal Model for Advanced Nanosheet FETs-Reference-Cited by-同舟云学术

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Geometry Dependent Multi-stage Compact Thermal Model for Advanced Nanosheet FETs

Published:2023-05-08 Issue: Volume: Page:
ISSN:
Container-title:2023 International Symposium of Electronics Design Automation (ISEDA)
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Author:

Chen Haifeng¹,Chen Wangyong¹,Chen Jiahui¹,Cai Linlin¹

Affiliation:

1. School of Microelectronics Science and Technology, Sun Yat-sen University,Guangzhou,China,510275

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10218344/10218369/10218563.pdf?arnumber=10218563

Reference19 articles.

1. ASAP5: A predictive PDK for the 5 nm node

2. Geometrical influence on Self Heating in Nanowire and Nanosheet FETs using TCAD Simulations

3. Comparing bulk-Si FinFET and gate-all-around FETs for the 5 nm technology node

4. Modeling of Effective Thermal Resistance in Sub-14-nm Stacked Nanowire and FinFETs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Neural Network-based Framework for Accelerated Device-Circuit Electrothermal Co-Simulations in GAAFETs;2024 2nd International Symposium of Electronics Design Automation (ISEDA);2024-05-10

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