Electronic and optical characteristics of anm-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer-Reference-Cited by-同舟云学术

Electronic and optical characteristics of anm-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer

Published:2016-03-09 Issue:5S Volume:55 Page:05FA03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kojima Kazunobu,Tsukada Yusuke,Furukawa Erika,Saito Makoto,Mikawa Yutaka,Kubo Shuichi,Ikeda Hirotaka,Fujito Kenji,Uedono Akira,Chichibu Shigefusa F.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=5S/a=05FA03/pdf

Reference36 articles.

1. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure

2. High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process

3. GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

4. Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate

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