Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates
Author:
Affiliation:
1. National Institute of Advanced Industrial Science and Technology, GaN-OIL, Nagoya, Aichi 464-8601, Japan
2. National Institute of Advanced Industrial Science and Technology, ADPERC, Tsukuba, Ibaraki 805-8501, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011362
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