Analyzing oxygen and silicon incorporation in GaN microstructures composed of c-planes and angled facets by confocal magneto-photoluminescence microscopy-Reference-Cited by-同舟云学术

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Analyzing oxygen and silicon incorporation in GaN microstructures composed of c-planes and angled facets by confocal magneto-photoluminescence microscopy

Published:2020-03-01 Issue:3 Volume:10 Page:035215
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Kamiyama Akinori¹,Kojima Kazunobu²^ORCID,Chichibu Shigefusa F.²^ORCID,Yusa Go¹³^ORCID

Affiliation:

1. Department of Physics, Tohoku University, Sendai 980-8578, Japan

2. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

3. Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Asahi Glass Foundation

the Center for Spintronics Research Network

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5144549

Reference32 articles.

1. Dislocation reduction in GaN crystal by advanced-DEEP

2. Ammonothermal GaN substrates: Growth accomplishments and applications

3. Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition

4. Polar dependence of impurity incorporation and yellow luminescence in GaN films grown by metal-organic chemical vapor deposition

5. Spectroscopic study of semipolar (112¯2)-HVPE GaN exhibiting high oxygen incorporation

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