Spectroscopic study of semipolar (112¯2)-HVPE GaN exhibiting high oxygen incorporation-Reference-Cited by-同舟云学术

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Spectroscopic study of semipolar (112¯2)-HVPE GaN exhibiting high oxygen incorporation

Published:2014-10-28 Issue:16 Volume:116 Page:163515
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Schustek Philipp¹²,Hocker Matthias¹,Klein Martin³,Simon Ulrich⁴,Scholz Ferdinand³,Thonke Klaus¹

Affiliation:

1. Institute of Quantum Matter, Ulm University, 89081 Ulm, Germany

2. Research Unit, Parc Sanitari Sant Joan de Déu and Foundation Sant Joan de Déu, Esplugues de Llobregat, 08950, Barcelona

3. Institute of Optoelectronics, Ulm University, 89081 Ulm, Germany

4. Scientific Computing Centre Ulm, Ulm University, 89081 Ulm, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG) "Polarization Field Control in Nitride Light Emitters" (PolarCoN)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4900602

Reference43 articles.

1. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

2. Reduction in Dislocation Density of Semipolar GaN Layers on Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy

3. Growth and coalescence behavior of semipolar $(11{\bar {2}}2)$ GaN on pre-structured r-plane sapphire substrates

4. HVPE growth of a -plane GaN on a GaN template (110)Si substrate

5. Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

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