The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN-Reference-Cited by-同舟云学术

The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN

Published:2018-03-14 Issue:16 Volume:123 Page:161413
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Chichibu S. F.¹²^ORCID,Uedono A.³^ORCID,Kojima K.¹,Ikeda H.⁴,Fujito K.⁴,Takashima S.⁵^ORCID,Edo M.⁵,Ueno K.⁵,Ishibashi S.⁶^ORCID

Affiliation:

1. Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980–8577, Japan

2. Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Chikusa 464-8603, Japan

3. Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan

4. LED Materials Department, Mitsubishi Chemical Corporation, Ushiku, Tsukuba 300-1295, Japan

5. Advanced Technology Laboratory, Fuji Electric Co., Ltd., Hino, Tokyo 191-8502, Japan

6. Research Center for Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

Funder

New Energy and Industrial Technology Development Organization

Ministry of Education, Culture, Sports, Science and Technology

MEXT | Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference77 articles.

1. In the statement of Scientific Background on the Nobel Prize in Physics 2014, Efficient blue light-emitting diodes leading to bright and energy-saving white light sources. Compiled by the Class for Physics of the Royal Swedish Academy of Sciences, October 7, 2014;

2. Nobel Lecture: Fascinated journeys into blue light

3. Nobel Lecture: Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p -type GaN by Mg doping followed by low-energy electron beam irradiation

4. Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

5. S. Nakamura , Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes, edited by S. Nakamura and S. F. Chichibu ( Taylor & Francis, London, 2000).

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