Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures-Reference-Cited by-同舟云学术

Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures

Published:2016-03-10 Issue:4S Volume:55 Page:04EG07
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Asubar Joel T.,Yoshida Satoshi,Tokuda Hirokuni,Kuzuhara Masaaki

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/55/i=4S/a=04EG07/pdf

Reference32 articles.

1. The toughest transistor yet [GaN transistors]

2. Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

3. GaN-Based RF Power Devices and Amplifiers

4. Recent progress of GaN power devices for automotive applications

5. Low-Loss and High-Voltage III-Nitride Transistors for Power Switching Applications

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