AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/Mo/Au ohmic contacts
Author:
Affiliation:
1. University of Fukui,Graduate school of Engineering,Fukui,Fukui 910-8507,Japan
2. Kwansei Gakuin University,School of Engineering,Sanda,Hyogo 669-1337,Japan
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10366231/10366326/10366331.pdf?arnumber=10366331
Reference6 articles.
1. Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
2. Highly reduced current collapse in AlGaN/GaN high-electron-mobility transistors by combined application of oxygen plasma treatment and field plate structures
3. Effects of nitrogen deficiency on electronic properties of AlGaN surfaces subjected to thermal and plasma processes
4. Vanadium-based ohmic contacts to n-type Al0.6Ga0.4N
5. Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures
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