Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4H-SiC(0001)
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/55/i=4S/a=04EB04/pdf
Reference35 articles.
1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
2. Transition layers at the SiO2∕SiC interface
3. High-carbon concentrations at the silicon dioxide–silicon carbide interface identified by electron energy loss spectroscopy
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Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Luminescence from color centres induced by oxidation and ion irradiation in 4H–SiC;Journal of Luminescence;2022-04
2. Defect engineering in SiC technology for high-voltage power devices;Applied Physics Express;2020-11-26
3. Intense ionizing irradiation-induced atomic movement toward recrystallization in 4H-SiC;Journal of Applied Physics;2020-10-28
4. SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature;Japanese Journal of Applied Physics;2018-11-20
5. Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001) on-Axis and 4° Off-Axis Substrates;ECS Transactions;2017-04-27
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