Interface trap of p-type gate integrated AlGaN/GaN heterostructure field effect transistors
Author:
Funder
National Research Foundation of Korea
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://stacks.iop.org/1347-4065/56/i=9/a=091002/pdf
Reference25 articles.
1. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices
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3. High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
4. Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
5. p-GaN/AlGaN/GaN Enhancement-Mode HEMTs
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1. Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs;IEEE Transactions on Electron Devices;2023-07
2. Analysis of VTH Degradation and Recovery Behaviors of p-GaN Gate HEMTs Under Forward Gate Bias;IEEE Transactions on Electron Devices;2023-06
3. Double-Phase Adaptive Neural Network for Condition-Based Monitoring of p-GaN HEMT Under Repetitive Short-Circuit Stresses;IEEE Transactions on Instrumentation and Measurement;2023
4. Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress;IEEE Transactions on Electron Devices;2022-12
5. Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress;IEEE Transactions on Electron Devices;2022-10
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