Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress
Author:
Affiliation:
1. State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China
Funder
Science and Technology Commission of Shanghai Municipality
Young Scientist Project of Ministry of Education (MOE) Innovation Platform
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/9967813/09918652.pdf?arnumber=9918652
Reference36 articles.
1. Off-state leakage current reduction in AlGaN/GaN high electron mobility transistors by combining surface treatment and post-gate annealing
2. Identification of Trap States in p-GaN Layer of a p-GaN/AlGaN/GaN Power HEMT Structure by Deep-Level Transient Spectroscopy
3. Analysis of the Gate Capacitance–Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures
4. Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy
5. On the origin of the leakage current in p-gate AlGaN/GaN HEMTs
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1. Trade-off between gate leakage current and threshold voltage stability in power HEMTs during ON-state and OFF-state stress;Microelectronics Reliability;2023-11
2. GaN-based power high-electron-mobility transistors on Si substrates: from materials to devices;Semiconductor Science and Technology;2023-04-25
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