Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress-Reference-Cited by-同舟云学术

Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress

Published:2022-10 Issue:10 Volume:69 Page:5733-5741
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Xiaoming¹,Chen Wanjun¹^ORCID,Sun Ruize¹^ORCID,Liu Chao¹^ORCID,Xia Yun¹,Xin Yajie¹,Xu Xiaorui¹^ORCID,Wang Fangzhou¹^ORCID,Chen Xinghuan¹,Chen Yiqiang²^ORCID,Zhang Bo¹^ORCID

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

2. Technology on Reliability Physics and Application of Electronic Component Laboratory, The Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/9901396/09874807.pdf?arnumber=9874807

Reference38 articles.

1. Investigation of the Trap States and $V_{\text{TH}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

2. Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling