Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl2plasma etching of GaN-Reference-Cited by-同舟云学术

Investigation of effects of ion energies on both plasma-induced damage and surface morphologies and optimization of high-temperature Cl2plasma etching of GaN

Published:2017-01-24 Issue:2 Volume:56 Page:026502
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Liu Zecheng,Pan Jialin,Asano Atsuki,Ishikawa Kenji,Takeda Keigo,Kondo Hiroki,Oda Osamu,Sekine Makoto,Hori Masaru

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=2/a=026502/pdf

Reference29 articles.

1. GaN, AlN, and InN: A review

2. Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor

3. Enhancement-Mode GaN MIS-HEMTs With n-GaN/i-AlN/n-GaN Triple Cap Layer and High- $k$ Gate Dielectrics

4. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

5. Sulfurization Growth of SnS Thin Films and Experimental Determination of Valence Band Discontinuity for SnS-Related Solar Cells

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1. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

2. GaN damage-free cyclic etching by sequential exposure to Cl2 plasma and Ar plasma with low Ar+-ion energy at substrate temperature of 400 °C;Journal of Applied Physics;2023-01-24

3. Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition;Applied Surface Science;2022-07

4. ICP etching of GaN microstructures in a Cl2–Ar plasma with subnanometer-scale sidewall surface roughness;Materials Science in Semiconductor Processing;2022-06

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