Metal/Al-doped ZnO ohmic contact for AlGaN/GaN high electron mobility transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1738175
Reference14 articles.
1. High transconductance-normally-off GaN MODFETs
2. CW operation of short-channel GaN/AlGaN doped channel heterostructure field effect transistors at 10 GHz and 15 GHz
3. Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts ton-type GaN
4. Low resistance ohmic contacts on wide band‐gap GaN
5. Thermal stability of W ohmic contacts ton‐type GaN
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