Metrology and inspection required for next generation lithography-Reference-Cited by-同舟云学术

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Metrology and inspection required for next generation lithography

Published:2017-04-24 Issue:6S1 Volume:56 Page:06GA01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Asano Masafumi,Yoshikawa Ryoji,Hirano Takashi,Abe Hideaki,Matsuki Kazuto,Tsuda Hirotaka,Komori Motofumi,Ojima Tomoko,Yonemitsu Hiroki,Kawamoto Akiko

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=6S1/a=06GA01/pdf

Reference55 articles.

1. Computational process modeling and correction in a multi-patterning era

2. Self-aligned quadruple patterning integration using spacer on spacer pitch splitting at the resist level for sub-32nm pitch applications

3. Immersion lithography extension to sub-10nm nodes with multiple patterning

4. EUV progress toward HVM readiness

5. EUV resists: What's next?

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1. Indirect Measurement Methods for Quality and Process Control in Nanomanufacturing;Nanomanufacturing and Metrology;2022-09

2. Measurement sensitivity of DUV scatterfield microscopy parameterized with partial coherence for duty ratio-varied periodic nanofeatures;Optics and Lasers in Engineering;2022-05

3. Metrology;2021 IEEE International Roadmap for Devices and Systems Outbriefs;2021-11

4. Effect of partial coherence on dimensional measurement sensitivity for DUV scatterfield imaging microscopy;Optics Express;2019-10-02

5. Metrology for the next generation of semiconductor devices;Nature Electronics;2018-10

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