EUV resists: What's next?-Reference-Cited by-同舟云学术

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EUV resists: What's next?

Published:2016-03-18 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Extreme Ultraviolet (EUV) Lithography VII
language:
Short-container-title:

Author:

Lio Anna¹

Affiliation:

1. Intel Corp. (United States)

Publisher

SPIE

Reference21 articles.

1. Cramming more components into integrated circuits;Moore,1965

2. Study on X-Ray reduction projection lithography;Kinoshita,1986

3. Tenth micron lithography with a 10 Hz 37.2 nm sodium laser

4. Soft x-ray projection lithography using an x-ray reduction camera;Hawryluk,1988

5. EUV Readiness for 7 nm;Phillips,2015

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1. Layer-Ordered Organooxotin Clusters for Extreme-Ultraviolet Photolithography;ACS Applied Materials & Interfaces;2024-07-22

2. Surface hardening of extreme ultraviolet(EUV) photoresist by CS2 plasma for highly selective and low damage patterning;Applied Surface Science;2023-08

3. Stochastic defect generation depending on tetraalkylhydroxide aqueous developers in extreme ultraviolet lithography;Japanese Journal of Applied Physics;2023-01-01

4. Investigating metal oxide resists for patterning 28-nm pitch structures using single exposure extreme ultraviolet: defectivity, electrical test, and voltage contrast study;Journal of Micro/Nanopatterning, Materials, and Metrology;2022-10-28

5. Perfluoroalkylated metallophthalocyanines as EUV resist candidates;Advances in Patterning Materials and Processes XXXIX;2022-05-25

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