Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=6/a=062302/pdf
Reference25 articles.
1. Efficient GaAs tunnel diode as an inter-cell ohmic contact in the tandem Al/sub x/Ga/sub 1-x/As/GaAs
2. New Phenomenon in Narrow Germaniump−nJunctions
3. Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy
4. The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAs
5. Epitaxy of silicon doped gallium arsenide by molecular beam method
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE;Japanese Journal of Applied Physics;2018-10-30
2. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions;Journal of Physics D: Applied Physics;2018-03-16
3. Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application;Semiconductor Science and Technology;2015-06-16
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