Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions
Author:
Publisher
IOP Publishing
Subject
Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://iopscience.iop.org/article/10.1088/1361-6463/aab1de/pdf
Reference23 articles.
1. Modelling of interband transitions in GaAs tunnel diode
2. Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions
3. Intrinsic limitations to the doping of wide-gap semiconductors
4. Fluctuations of the peak current of tunnel diodes in multi-junction solar cells
5. Numerical simulation of tunnel diodes for multi‐junction solar cells
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