Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions-Reference-Cited by-同舟云学术

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Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions

Published:2017-09-01 Issue:38 Volume:50 Page:385109
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Louarn K,Claveau Y,Hapiuk D,Fontaine C,Arnoult A,Taliercio T,Licitra C,Piquemal F,Bounouh A,Cavassilas N,Almuneau G

Funder

Agence Nationale de la Recherche

EURAMET

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://iopscience.iop.org/article/10.1088/1361-6463/aa804e/pdf

Reference32 articles.

1. Numerical simulation of tunnel diodes for multi‐junction solar cells

2. Tunnel Diode Modeling, Including Nonlocal Trap-Assisted Tunneling: A Focus on III–V Multijunction Solar Cell Simulation

3. Resonant electron tunneling through defects in GaAs tunnel diodes

4. Modelling of interband transitions in GaAs tunnel diode

5. TheE(k) Relation for a Two-Band Scheme of Semiconductors and the Application to the Metal-Semiconductor Contact

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heat exchange with interband tunneling;Journal of Applied Physics;2019-10-28

2. Why the effective-mass approximation works so well for nano-structures;EPL (Europhysics Letters);2019-02-26

3. Thickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells;ACS Applied Energy Materials;2019-01-04

4. Tunnel Junctions for III-V Multijunction Solar Cells Review;Crystals;2018-11-28

5. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions;Journal of Physics D: Applied Physics;2018-03-16

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