Thickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells-Reference-Cited by-同舟云学术

Thickness Limitation of Band-to-Band Tunneling Process in GaAsSb/InGaAs Type-II Tunnel Junctions Designed for Multi-Junction Solar Cells

Published:2019-01-04 Issue:2 Volume:2 Page:1149-1154
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Louarn K.¹²,Claveau Y.³,Fontaine C.¹,Arnoult A.¹,Marigo-Lombart L.¹,Massiot I.¹,Piquemal F.²,Bounouh A.⁴,Cavassilas N.³^ORCID,Almuneau G.¹^ORCID

Affiliation:

1. LAAS-CNRS, Université de Toulouse, 7 Avenue du Colonel Roche, 31400 Toulouse, France

2. LNE, 29 Avenue Roger Hennequin, F-78197 Trappes, France

3. Aix Marseille Université, CNRS, Université de Toulon, IM2NP, UMR 7334, 13397 Marseille, France

4. CEA LIST, Centre d’études, F-91400 Gif-sur-Yvette, France

Funder

European Commission

Association Nationale de la Recherche et de la Technologie

Centre National de la Recherche Scientifique

EURAMET

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.8b01700

Reference24 articles.

1. Four-Junction Wafer-Bonded Concentrator Solar Cells

2. High-efficiency multijunction solar cells employing dilute nitrides

3. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction

4. $I$–$V$Characterization of Tunnel Diodes and Multijunction Solar Cells

5. Dopant and defect energetics: Si in GaAs

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