High-Gain InAlGaAs Quaternary Quantum Wells for High-Power 760 nm Two-Junction VCSELs-Reference-Cited by-同舟云学术

High-Gain InAlGaAs Quaternary Quantum Wells for High-Power 760 nm Two-Junction VCSELs

Published:2023-10 Issue:5 Volume:59 Page:1-8
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Li Yan¹,Zhao Feiyun¹,Tang Zhiting¹,Li Chuanlin¹,Liu Jilin¹,Ren Aobo¹^ORCID,Kuo Hao-Chung²^ORCID,Wu Jiang³

Affiliation:

1. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, China

2. Semiconductor Research Center, Hon Hai Research Institute, Taipei, Taiwan

3. Institute of Fundamental and Frontier Sciences and the State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China

Funder

National Key Research and Development Program of China

Higher Education Discipline Innovation Project

Fundamental Research Funds for the Central Universities

Innovation Group Project of Sichuan Province

University of Electronic Science and Technology of China Shared Research Facilities of Electromagnetic Wave and Matter Interaction

National Natural Science Foundation of China

Natural Science Foundation of Sichuan Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

http://xplorestaging.ieee.org/ielx7/3/10189366/10168093.pdf?arnumber=10168093

Reference37 articles.

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4. The absorption in tunneling junction and its influence on the characteristics of novel high power semiconductor laser;shuang,2000

5. High Slope Efficiency Bipolar Cascade 905nm Vertical Cavity Surface Emitting Laser

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