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Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

  • Published:2009-07-06 Issue:15 Volume:42 Page:155101
  • ISSN:0022-3727
  • Container-title:Journal of Physics D: Applied Physics
  • language:
  • Short-container-title:J. Phys. D: Appl. Phys.

Author:

Jandieri K,Baranovskii S D,Stolz W,Gebhard F,Guter W,Hermle M,Bett A W

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Preparation of low-resistance tunnel junction for high efficiency multi-junction semiconductor laser diodes;14th National Conference on Laser Technology and Optoelectronics (LTO 2019);2019-05-17

2. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions;Journal of Physics D: Applied Physics;2018-03-16

3. Modelling of interband transitions in GaAs tunnel diode;Semiconductor Science and Technology;2016-04-26

4. Tunnel-Junction-Limited Multijunction Solar Cell Performance Over Concentration;IEEE Journal of Selected Topics in Quantum Electronics;2013-09

5. Theoretical performance of multi-junction solar cells combining III-V and Si materials;Optics Express;2012-08-29
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