Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy-Reference-Cited by-同舟云学术

Be redistribution in GaInP and growth of GaInP/AlInP tunnel diode by gas source molecular beam epitaxy

Published:2000-02 Issue:2-3 Volume:209 Page:459-462
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Li Wei,Likonen Jari,Haapamaa Jouko,Pessa Markus

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference6 articles.

1. Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells

2. J. Lammasniemi, A.B. Kazantsev, R. Jaakkola, R. Aho, T. Mäkelä, M. Pessa, A. Ovtchinnikov, H. Asonen, A. Rodden, K. Bogus, second World Conference on Photovoltaic Solar Energy Conversion, Vienna, 6–10 July 1998, p. 3520.

3. Concentration dependent Zn diffusion in InP during metalorganic vapor phase epitaxy

4. Diffusion mechanism of zinc and beryllium in gallium arsenide

5. Be redistribution in InGaAs and InP grown by gas source molecular beam epitaxy

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1. Growth optimization of InAs/GaAs quantum dots and performance enhancement of a GaAs tunnel diode by embedding quantum dots for solar cell application;Semiconductor Science and Technology;2015-06-16

2. Improved performance of GaAs tunnel diode by embedding InAs quantum dot layer for tandem solar cells;Applied Physics Express;2015-05-29

3. Preparation and Characterization of Open Tunnel Oxide α-MnO2 Precipitated by Ozone Oxidation;Journal of Solid State Chemistry;2001-06