Mechanism of Zn and Si diffusion from a highly doped tunnel junction for InGaP/GaAs tandem solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.369278
Reference8 articles.
1. Over 30% efficient InGaP/GaAs tandem solar cells
2. A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
3. Double Heterostructure GaAs Tunnel Junction for a AlGaAs/GaAs Tandem Solar Cell
4. Two-Terminal MonolithicIn0.5Ga0.5P/GaAsTandem Solar Cells with a High Conversion Efficiency of Over 30%
5. Growth and diffusion of abrupt zinc profiles in gallium arsenide and heterojunction bipolar transistor structures grown by organometallic vapor phase epitaxy
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1. 1.65 eV p-AlGaAs/n-GaAs QW/n-AlGaAs Tunnel Junctions with Delta-Doping for Monolithic III–V/Si Tandem Solar Cells;ACS Applied Optical Materials;2024-04-10
2. Thermal degradation comparison of delta-doped GaAs tunnel junctions using Si and Te n-type dopants;AIP Advances;2023-04-01
3. Multiple tunnel diode peaks in I–V curves of a multijunction laser power converter;Applied Physics Letters;2022-12-05
4. Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell;Solar Energy Materials and Solar Cells;2022-12
5. Effect of doping concentration of tunnel junction on I-V characteristics of photovoltaic power converter;Europhysics Letters;2022-08-30
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