Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/8/i=6/a=066501/pdf
Reference17 articles.
1. Normally Off Single-Nanoribbon $\hbox{Al}_{2} \hbox{O}_{3}\hbox{/GaN}$ MISFET
2. Heterojunction-Free GaN Nanochannel FinFETs With High Performance
3. High-Performance GaN-Based Nanochannel FinFETs With/Without AlGaN/GaN Heterostructure
4. Calculated threshold-voltage characteristics of an XMOS transistor having an additional bottom gate
5. High performance fully-depleted tri-gate CMOS transistors
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