Fabrication AlGaN/GaN Fin-HEMTs With Hexagon Nano-scale Fin Channel-Reference-Cited by-同舟云学术

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Fabrication AlGaN/GaN Fin-HEMTs With Hexagon Nano-scale Fin Channel

Published:2023-12-04 Issue: Volume: Page:1-3
ISSN:
Container-title:2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
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Author:

Lu Yu-Hsuan¹,Chang Yu-Cheng²,Lu Wei-Ju²,Lin Feng-Ting³,Xu Bo-Hsun²,Wu Chao-Hsin¹

Affiliation:

1. National Taiwan University,Graduate School of Advanced Technology,Taipei,Taiwan

2. Graduate Institute of Photonics and Optoelectronics National Taiwan University,Taipei,Taiwan

3. National Taiwan University,Graduate Institute of Electronics Engineerings,Taipei,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10382185/10382163/10382164.pdf?arnumber=10382164

Reference8 articles.

1. Origins of the short channel effects increase in III-V nMOSFET technologies

2. Characterization of m-GaN and a-GaN Crystallographic Planes after Being Chemically Etched in TMAH Solution

3. On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

4. Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach

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