Origins of the short channel effects increase in III-V nMOSFET technologies-Reference-Cited by-同舟云学术

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Origins of the short channel effects increase in III-V nMOSFET technologies

Published:2012-03 Issue: Volume: Page:
ISSN:
Container-title:2012 13th International Conference on Ultimate Integration on Silicon (ULIS)
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Author:

Dutta T.,Rafhay Q.,Clerc R.,Lacord J.,Monfray S.,Pananakakis G.,Boeuf F.,Ghibaudo G.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6189092/6193341/06193348.pdf?arnumber=6193348

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fabrication AlGaN/GaN Fin-HEMTs With Hexagon Nano-scale Fin Channel;2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA);2023-12-04

2. Impact of Channel Thickness Variation on Bandstructure and Source-to-Drain Tunneling in Ultra-Thin Body III-V MOSFETs;IEEE Journal of the Electron Devices Society;2016-03

3. Atomistic study of band structure and transport in extremely thin channel InP MOSFETs;physica status solidi (a);2016-02-29

4. Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials;Solid-State Electronics;2015-09

5. Compact modeling of the shift between classical and quantum threshold voltages in a III–V nanowire;Solid-State Electronics;2014-10

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