Atomistic study of band structure and transport in extremely thin channel InP MOSFETs-Reference-Cited by-同舟云学术

Atomistic study of band structure and transport in extremely thin channel InP MOSFETs

Published:2016-02-29 Issue:4 Volume:213 Page:898-904
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Dutta Tapas¹,Kumar Piyush¹,Rastogi Priyank¹,Agarwal Amit²,Chauhan Yogesh Singh¹

Affiliation:

1. Department of Electrical Engineering; Indian Institute of Technology Kanpur; Kanpur India

2. Department of Physics; Indian Institute of Technology Kanpur; Kanpur India

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssa.201532727/fullpdf

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4. Quantum Confinement Effects in Extremely Thin Body Germanium n-MOSFETs

5. Modeling SiGe FinFETs With Thin Fin and Current-Dependent Source/Drain Resistance

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