Density Gradient Based Quantum-Corrected 3D Drift-Diffusion Simulator for Nanoscale MOSFETs
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9677467/9677468/09677480.pdf?arnumber=9677480
Reference17 articles.
1. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study
2. Quantum device-simulation with the density-gradient model on unstructured grids
3. Theoretical foundations of the quantum drift-diffusion and density-gradient models
4. Use of density gradient quantum corrections in the simulation of statistical variability in MOSFETs
5. Simulation of Nano-CMOS Devices: From Atoms to Architecture
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1. Analysis of quantum confinement in nanosheet FETs by using a quantum drift diffusion model;Electronics and Communications in Japan;2023-02-08
2. Interface Scattering as a Nonlocal Transport Phenomenon in Semiconductors;IEEE Journal of the Electron Devices Society;2023
3. Hierarchical simulation of nanosheet field effect transistor: NESS flow;Solid-State Electronics;2023-01
4. Analysis of Quantum Confinement in Nanosheet FETs by Using a Quantum Drift Diffusion Model;IEEJ Transactions on Electronics, Information and Systems;2022-11-01
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