On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si-Reference-Cited by-同舟云学术

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Published:2018-05-21 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

He Junlei,Feng Meixin,Zhong Yaozong,Wang Jin,Zhou Rui,Gao Hongwei,Zhou Yu,Sun Qian,Liu Jianxun,Huang Yingnan,Zhang Shuming,Wang Huaibing,Ikeda Masao,Yang Hui

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-26305-8.pdf

Reference33 articles.

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2. Chen, R. et al. Nanolasers grown on silicon. Nat. Photonics 5, 170–175 (2011).

3. Chen, S. M. et al. Electrically pumped continuous-wave III–V quantum dot lasers on silicon. Nat. Photonics 10, 307–311 (2016).

4. Sun, Y. et al. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si. Nat. Photonics 10, 595–599 (2016).

5. Feng, M. et al. Room-temperature electrically pumped InGaN-based microdisk laser grown on Si. Optics express 26, 5043–5051 (2018).

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