Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels-Reference-Cited by-同舟云学术

Influence of work function variation of metal gates on fluctuation of sub-threshold drain current for fin field-effect transistors with undoped channels

Published:2014-01-01 Issue:4S Volume:53 Page:04EC11
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Matsukawa Takashi,Liu Yongxun,Endo Kazuhiko,Tsukada Junichi,Yamauchi Hiromi,Ishikawa Yuki,O’uchi Shinichi,Mizubayashi Wataru,Ota Hiroyuki,Migita Shinji,Morita Yukinori,Masahara Meishoku

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference34 articles.

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