Development of a method to evaluate the stress distribution in 4H-SiC power devices-Reference-Cited by-同舟云学术

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Development of a method to evaluate the stress distribution in 4H-SiC power devices

Published:2018-09-21 Issue:10 Volume:57 Page:106602
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakakima Hiroki,Takamoto So^ORCID,Murakami Yoichi,Hatano Asuka,Goryu Akihiro,Hirohata Kenji,Izumi Satoshi

Funder

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/57/i=10/a=106602/pdf

Reference53 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

2. Material science and device physics in SiC technology for high-voltage power devices

3. (Invited) Degradation of SiC Bipolar Devices: A Review of Likely Causes and Recent Advances in its Understanding

4. Degradation of hexagonal silicon-carbide-based bipolar devices

5. Application of three-dimensional dislocation dynamics simulation to the STI semiconductor structure

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Very High In‐Plane Magnetic Field Sensitivity in Ion‐Implanted 4H‐SiC PIN Diodes;Advanced Electronic Materials;2024-03-27

2. Exploration of the mechanical properties of carbon-incorporated amorphous silica using a universal neural network potential;Journal of Applied Physics;2024-02-22

3. Decoupling analysis of stress components on monocrystalline silicon using angle-resolved oblique backscattering Raman spectroscopy;Acta Mechanica Sinica;2024-02-07

4. Development of Raman Spectroscopy for Defect Analysis in SiC Devices;2023 18th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT);2023-10-25

5. The effects of stress on interfacial properties and flatband voltage instability of 4H-SiC MOS structures;Microelectronics Reliability;2023-08

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